Thermal retention of atomic layer deposited Hf0.5Zr0.502 films using H2O and O2–H2 plasma oxidation methods

Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

(2020) Glen Walters et al.   APPLIED PHYSICS LETTERS

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

(2020) Katherine Hansen et al.   Materials

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

(2020) Jae Hur et al.   NANOTECHNOLOGY

Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films

(2019) Aniruddh Shekhawat et al.   THIN SOLID FILMS

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

(2019) Jun-Dao Luo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

(2019) Takashi Onaya et al.   MICROELECTRONIC ENGINEERING

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

(2019) D.R. Islamov et al.   MICROELECTRONIC ENGINEERING

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

(2018) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performance

(2017) Terence Mittmann et al.   MICROELECTRONIC ENGINEERING

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

(2014) Sang Young Lee et al.   Journal of Materials Chemistry C

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY