Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films

(2019) Aniruddh Shekhawat et al.   THIN SOLID FILMS

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

(2019) Jun-Dao Luo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

(2018) Glen Walters et al.   APPLIED PHYSICS LETTERS

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

(2018) Youngin Goh et al.   APPLIED PHYSICS LETTERS

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

(2017) Young Hwan Lee et al.   NANOTECHNOLOGY

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulses

(2016) Miika Mattinen et al.   Journal of Physical Chemistry C

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Annealing behavior of ferroelectric Si-doped HfO2 thin films

(2016) Patrick D. Lomenzo et al.   THIN SOLID FILMS

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

The effects of layering in ferroelectric Si-doped HfO2 thin films

(2014) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

(2014) M. Morales-Masis et al.   APL Materials

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device

(2012) Yang Yin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY