Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

标题
Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation
作者
关键词
Hafnium oxide, Ferroelectric materials, Crystallographic defects, Oxygen vacancy, DFT calculations
出版物
MICROELECTRONIC ENGINEERING
Volume 216, Issue -, Pages 111041
出版商
Elsevier BV
发表日期
2019-06-08
DOI
10.1016/j.mee.2019.111041

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