Insulators for 2D nanoelectronics: the gap to bridge

Laser-writable high-k dielectric for van der Waals nanoelectronics

(2019) N. Peimyoo et al.   Science Advances

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

(2019) Felix Palumbo et al.   ADVANCED FUNCTIONAL MATERIALS

Integrating graphene into semiconductor fabrication lines

(2019) Daniel Neumaier et al.   NATURE MATERIALS

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

(2018) Bernhard Stampfer et al.   ACS Nano

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

(2018) Yuan-Ming Chang et al.   ADVANCED MATERIALS

Thickness Dependence of Low-Frequency Noise in MoS2 Field-Effect Transistors With Enhanced Back-Gate Control

(2018) Xin-Ran Nie et al.   IEEE ELECTRON DEVICE LETTERS

MBE growth of few-layer 2H-MoTe 2 on 3D substrates

(2018) Suresh Vishwanath et al.   JOURNAL OF CRYSTAL GROWTH

Comphy — A compact-physics framework for unified modeling of BTI

(2018) G. Rzepa et al.   MICROELECTRONICS RELIABILITY

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

(2018) W. Goes et al.   MICROELECTRONICS RELIABILITY

Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films

(2018) Stefan Wagner et al.   NANO LETTERS

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

(2018) Changhee Lee et al.   NANOTECHNOLOGY

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

(2018) Jimmy Melskens et al.   IEEE Journal of Photovoltaics

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

(2018) Quoc An Vu et al.   2D Materials

Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

(2018) Fei Hui et al.   2D Materials

A Physical Model for the Hysteresis in MoS2 Transistors

(2018) Theresia Knobloch et al.   IEEE Journal of the Electron Devices Society

Inverse design in search of materials with target functionalities

(2018) Alex Zunger   Nature Reviews Chemistry

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

(2018) Himadri Pandey et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 Transistors

(2018) Abdullah Alharbi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2

(2018) Shen Lai et al.   Nanoscale

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

(2018) Yu Pan et al.   NANOTECHNOLOGY

Double-slit photoelectron interference in strong-field ionization of the neon dimer

(2018) Maksim Kunitski et al.   Nature Communications

Performance Limit Projection of Germanane Field-Effect Transistors

(2017) AbdulAziz AlMutairi et al.   IEEE ELECTRON DEVICE LETTERS

Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

(2017) Yury Yu. Illarionov et al.   IEEE ELECTRON DEVICE LETTERS

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

High-performance multilayer WSe2 field-effect transistors with carrier type control

(2017) Pushpa Raj Pudasaini et al.   Nano Research

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

(2016) Hui Zhu et al.   ACS Applied Materials & Interfaces

A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer

(2016) Christin Büchner et al.   ACS Nano

Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

(2016) Tae-Young Kim et al.   ACS Nano

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine

(2016) Jun Hong Park et al.   ACS Nano

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

(2016) Yury Yuryevich Illarionov et al.   ACS Nano

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

(2016) Felicia A. McGuire et al.   APPLIED PHYSICS LETTERS

Few-layer SnSe2 transistors with high on/off ratios

(2016) Tengfei Pei et al.   APPLIED PHYSICS LETTERS

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

(2016) Yury Yu. Illarionov et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the use of two dimensional hexagonal boron nitride as dielectric

(2016) Fei Hui et al.   MICROELECTRONIC ENGINEERING

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Hexagonal boron nitride is an indirect bandgap semiconductor

(2016) G. Cassabois et al.   Nature Photonics

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

(2016) Nan Fang et al.   2D Materials

The role of charge trapping in MoS2/SiO2and MoS2/hBN field-effect transistors

(2016) Yury Yu Illarionov et al.   2D Materials

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2devices

(2016) Kirby K H Smithe et al.   2D Materials

Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

(2015) Meng-Yen Tsai et al.   ACS Applied Materials & Interfaces

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Transferred large area single crystal MoS2 field effect transistors

(2015) Choong Hee Lee et al.   APPLIED PHYSICS LETTERS

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

(2015) Yury Illarionov et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

(2015) Filip A. Rasmussen et al.   Journal of Physical Chemistry C

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

(2015) Sajedeh Manzeli et al.   NANO LETTERS

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

(2015) Mahito Yamamoto et al.   NANO LETTERS

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase

(2015) A. G. Banshchikov et al.   PHYSICS OF THE SOLID STATE

Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene

(2015) Suresh Vishwanath et al.   2D Materials

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

(2014) Yoshiaki Hattori et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Bias-temperature instability in single-layer graphene field-effect transistors

(2014) Yu. Yu. Illarionov et al.   APPLIED PHYSICS LETTERS

Titanium Oxide Nanosheets: Graphene Analogues with Versatile Functionalities

(2014) Lianzhou Wang et al.   CHEMICAL REVIEWS

Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

(2014) Luis Miguel Procel et al.   IEEE ELECTRON DEVICE LETTERS

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

(2014) Yu. Yu. Illarionov et al.   JOURNAL OF APPLIED PHYSICS

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

(2014) Joshua D. Wood et al.   NANO LETTERS

Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper

(2014) Roland Yingjie Tay et al.   NANO LETTERS

Graphene–boron nitride superlattices: the role of point defects at the BN layer

(2014) M J S Matos et al.   NANOTECHNOLOGY

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

(2014) F. H. L. Koppens et al.   Nature Nanotechnology

Graphene based low insertion loss electro-absorption modulator on SOI waveguide

(2014) Muhammad Mohsin et al.   OPTICS EXPRESS

Electrical stability of multilayer MoS2field-effect transistor under negative bias stress at various temperatures

(2014) Suk Yang et al.   Physica Status Solidi-Rapid Research Letters

First-principles theory of nonradiative carrier capture via multiphonon emission

(2014) Audrius Alkauskas et al.   PHYSICAL REVIEW B

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator

(2014) A.-J. Cho et al.   ECS Solid State Letters

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Charge Transport and Degradation in HfO2 and HfOx Dielectrics

(2013) Andrea Padovani et al.   IEEE ELECTRON DEVICE LETTERS

Production and processing of graphene and 2d crystals

(2013) Francesco Bonaccorso et al.   Materials Today

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation

(2013) Junhong Na et al.   Nanoscale

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

(2013) M. I. Vexler et al.   SEMICONDUCTORS

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

(2012) Viorel Dragoi et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

(2012) Nicholas Petrone et al.   NANO LETTERS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors

(2012) Mayeul d’Avezac et al.   PHYSICAL REVIEW LETTERS

Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells

(2011) Lucas H. Hess et al.   ADVANCED MATERIALS

BN/Graphene/BN Transistors for RF Applications

(2011) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

(2011) B. Grandchamp et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(111) and Ge(111): Role of transverse momentum conservation

(2011) Y.Y. Illarionov et al.   MICROELECTRONIC ENGINEERING

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

(2011) Tibor Grasser   MICROELECTRONICS RELIABILITY

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Direct graphene growth on insulator

(2011) Gunther Lippert et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

(2010) Jenny Hu et al.   JOURNAL OF APPLIED PHYSICS

Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields

(2010) Thiti Taychatanapat et al.   PHYSICAL REVIEW LETTERS

Tunneling of electrons with conservation of the transverse wave vector in the Au/CaF2/Si(111) system

(2010) M. I. Vexler et al.   PHYSICS OF THE SOLID STATE

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

(2010) Heung-Jae Cho et al.   SOLID-STATE ELECTRONICS

Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

(2009) M. I. Vexler et al.   JOURNAL OF APPLIED PHYSICS

Mobility extraction in SOI MOSFETs with sub 1nm body thickness

(2009) M. Schmidt et al.   SOLID-STATE ELECTRONICS

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today