Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 38, Issue 12, Pages 1763-1766

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-11-02

DOI

10.1109/led.2017.2768602

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