Article
Physics, Condensed Matter
M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche, J. Zuniga-Perez
Summary: The diffusion at the AlN/Al0.3Ga0.7N interface was found to be weakly concentration-dependent and more strain-dependent. Unintentional annealing during long growth runs resulted in the formation of AlGaN graded layers at each interface.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Physics, Applied
Dong Han, Wen-Qi Wei, Ming Ming, Zihao Wang, Ting Wang, Jian-Jun Zhang
Summary: In recent years, there has been a strong demand for GaSb-on-Si direct heteroepitaxy to expand the operating wavelength range to mid-infrared and high-mobility applications. However, the growth of high-quality GaSb films on Si is challenging due to the generation of high-density defects. In this study, we proposed a novel design and growth strategy to achieve the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD) through the use of a V-grooved Si hollow structure and InGaSb/GaSb dislocation filtering layers. The reported results greatly improve the overall quality of epitaxial Si-based antimonide, benefiting various devices and critical applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Crystallography
Si-Wei Lin, Jin-Yi Yan, Xu-Yi Zhao, Wen-Fu Yu, Qian Gong
Summary: A new method for measuring the content of fully-strained InxGa1-xAsyP1-y/InP layer using X-ray diffraction (XRD) has been reported. The high precision measurement is achieved by analyzing the temperature dependent Omega-2Theta curves and applying linear elasticity theory. The results obtained from the new method agree with those obtained from conventional methods.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
V. G. Shengurov, V. Yu Chalkov, S. A. Denisov, V. N. Trushin, A. Zaitsev, A. Nezhdanov, D. A. Pavlov, D. O. Filatov
Summary: We investigate the growth defect formation in GeSn/Ge/Si(001) epitaxial layers and find that the nucleation of alpha-Sn nanoinclusions is the main mechanism for elastic strain relaxation in Ge1_xSnx epitaxial layers, while misfit dislocation formation occurs at the GeSn/Ge interfaces. Additionally, beta-Sn nanoislands are identified on the surface of the GeSn epitaxial layers due to Sn segregation causing increased Sn concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Materials Science, Multidisciplinary
Alberto Binetti, Wei-Fan Hsu, Koen Schouteden, Jin Won Seo, Jean-Pierre Locquet, Maria Recaman Payo
Summary: Vanadium sesquioxide (V2O3) is a promising material for new-generation sensors or smart devices due to its strong correlation effects and tunable metal-insulator transitions. The successful growth of epitaxial thin films on silicon substrates has been achieved by adjusting the growth conditions, and extensive characterization has been carried out. Structural analysis reveals the impact of temperature on thin film microstructures, and the lattice mismatch between silicon and V2O3 induces the growth of the corundum PI phase. Additionally, small deviations from stoichiometry significantly affect the resistivity change upon cooling.
RESULTS IN PHYSICS
(2023)
Article
Crystallography
A. Benali, P. Rajak, R. Ciancio, J. R. Plaisier, S. Heun, G. Biasiol
Summary: This study investigates the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown on GaAs by molecular beam epitaxy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers can embed InAs quantum wells with high thickness. This technique allows for higher low-temperature electron mobilities than previously reported for metamorphic growth on GaAs, comparable to those achieved for samples grown on InP substrates.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Multidisciplinary
Peter Kerres, Yiming Zhou, Hetal Vaishnav, Mohit Raghuwanshi, Jiangjing Wang, Maria Haeser, Marc Pohlmann, Yudong Cheng, Carl-Friedrich Schoen, Thomas Jansen, Christophe Bellin, Daniel E. Buergler, Abdur Rehman Jalil, Christoph Ringkamp, Hugo Kowalczyk, Claus M. Schneider, Abhay Shukla, Matthias Wuttig
Summary: Chalcogenides have a unique combination of properties and can be applied in various fields. Reducing the thickness of thin films can alter these properties, and this thickness dependence is particularly significant in some chalcogenide films.
Article
Chemistry, Physical
Mansi Agrawal, Anubha Jain, Vishakha Kaushik, Akhilesh Pandey, B. R. Mehta, R. Muralidharan
Summary: In this study, catalyst-free GaN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam epitaxy, followed by the deposition of a few layers of MoS2 by chemical vapor deposition. The morphology and vibrational properties of the MoS2/GaN nanowires on Si (111) substrates were analyzed using scanning electron microscopy and Raman spectroscopy. The results indicate the potential of MoS2/GaN nanowires heterojunction for future optoelectronic devices due to their exceptional structural and vibrational properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Crystallography
M. Mitsuhara, T. Gotow, T. Hoshi, H. Sugiyama, M. Takenaka, S. Takagi
Summary: Comparisons were made between the structural and photoluminescence properties of 1% tensile-strained InGaAs and GaAsSb layers grown on InP substrates, revealing that the surface roughening on the GaAsSb layer proceeds more slowly with increasing layer thickness. Experimental results obtained through X-ray diffraction and photoluminescence measurements strongly reflected the differences in morphological evolution between the InGaAs and GaAsSb layers. Cross-sectional TEM observations showed that the surface morphology of the InGaAs and GaAsSb layers is dependent on whether facets are formed on the surface.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Engineering, Electrical & Electronic
Hawoong Hong, Xinyue Fang, Friederike Wrobel, Meng-Kai Lin, Zhan Zhang, Kevin M. Peterson, Anand Bhattacharya, Dillon D. Fong, Tai-Chang Chiang
Summary: In this study, the structural development of La2CuO4 thin films grown on a LaSrAlO4 substrate by molecular beam epitaxy was investigated, revealing that the atomic structure of the interface is fully established after one unit cell of growth, while the growth front morphology continues to evolve until the start of the third unit cell. This multimodal investigation provides insights into atomic processes during layered oxide interface formation, including the rearrangement of LaO and CuO2 layers, which are critical for engineering functional layer structures and ultrathin films.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Sandra Stanionyte, Tadas Malinauskas, Gediminas Niaura, Martynas Skapas, Jan Devenson, Anunas Krotkus
Summary: Bismuth films with different thicknesses were grown on a Si (111) substrate by molecular beam epitaxy, where the crystal structures and strain properties were studied using high-resolution X-ray diffraction and Raman measurements. It was found that different phases of bismuth exhibit distinct structural features and physical properties depending on the layer thickness.
Article
Crystallography
Houyao Xue, Koki Shiraishi, Yosuke Izuka, Sora Saito, Shingo Taniguchi, Tsubasa Saito, Yuichi Sato
Summary: The growth of InN nanopillar crystals on steering-crystal-formed multi-crystalline Si substrates was investigated in this study. It was found that (In)GaN steering nanopillar crystals could be used to control the alignment of InN. By inserting InGaN crystals and adjusting the growth time of the steering crystals and the V/III supply ratio, the structural changes of InN nanopillar crystals under different conditions were clarified.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Habib Ahmad, Jeff Lindemuth, Zachary Engel, Christopher M. Matthews, Timothy M. McCrone, William Alan Doolittle
Summary: While beryllium has long been predicted as the best p-type dopant for GaN and AlN, experimental validation has not always been consistent with these predictions. Metal modulated epitaxy (MME) grown Be-doped AlN shows significant p-type conductivity with the potential for practical applications.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Aleksey Nikolaevich Klochkov, Aleksander Nikolaevich Vinichenko, Artyom Alekseevich Samolyga, Sergey Mihailovich Ryndya, Maksim Viktorovich Poliakov, Nikolay Ivanovich Kargin, Ivan Sergeevich Vasil'evskii
Summary: This study explores silicon doped indium arsenide polycrystalline thin films grown on c-oriented alpha-sapphire substrates by molecular beam epitaxy. The structural and transport properties of the films are investigated, showing electron mobility of about 600 cm(2)/V·s at room temperature and excellent temperature stability of electrophysical properties in the range of 80-320 K. The use of an InAlAs seed layer during the initial growth stage is found to reduce the roughness and width of the n-InAs films, indicating the potential for temperature stable Hall effect magnetic field sensors based on InAs.
APPLIED SURFACE SCIENCE
(2023)
Article
Optics
Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic, Shane R. Johnson
Summary: InAsSbBi samples were grown on GaSb substrates with different offcuts, showing coherent strain and no observable defects. The offcut angle did not significantly affect the structural and interface quality of the samples. Bi-rich surface droplet features were observed on all samples, with variations in shape based on the offcut angle.
Article
Chemistry, Physical
Aditya Sundar, Yuqing Huang, Jianguo Yu, M. Nedim Cinbiz
Summary: Solid state hydrides, such as early transition metal hydrides, play a crucial role in the future of hydrogen energy. This study reveals the intricate bonding features and electron structure differences between early transition metal hydrides and alkali/alkaline earth metal hydrides, shedding light on their hydrogen retention and transport behavior.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2022)
Article
Chemistry, Multidisciplinary
Carol F. Glover, Tsuyoshi Miyake, Victor Wallemacq, Jamie D. Harris, John Emery, Daniel A. Engel, Stephen J. McDonnell, John R. Scully
Summary: Contamination of high-touch surfaces with infected droplets of bodily secretions is a known route of virus transmission. Copper surfaces have the ability to inactivate human coronaviruses by releasing ions, making them a potential preventive strategy. This study investigated the virus inactivation effect on copper surfaces under realistic conditions and discovered that the half-life of the virus decreased five times compared to previous knowledge, indicating that virus inactivation on copper surfaces may be more effective than previously thought.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Jashan Singhal, Jimy Encomendero, Yongjin Cho, Len van Deurzen, Zexuan Zhang, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena
Summary: In this study, N-polar AlN epilayers were successfully grown on the N-face of AlN substrates using plasma-assisted molecular beam epitaxy. In situ thermal deoxidation and Al-assisted thermal desorption were used to remove native surface oxides and impurities, resulting in successful homoepitaxy. The grown AlN layer exhibited smooth surface morphologies and low structural defect densities, with the presence of interesting inversion domains.
Article
Multidisciplinary Sciences
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai, Vladimir Protasenko, Jashan Singhal, Hideto Miyake, Huili Grace Xing, Debdeep Jena, YongJin Cho
Summary: Successful homoepitaxial growth of N-polar AlN has been achieved on large-area N-polar AlN templates using MBE. Al-assisted cleaning enables the epitaxial film to maintain N-polarity, resulting in a smooth, defect-free surface and suppression of nonradiative recombination centers.
Article
Physics, Applied
Micah S. S. Haseman, Daram N. N. Ramdin, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Leonard J. J. Brillson
Summary: This study investigates the movement of electrically charged defects in Ga2O3 vertical trench power diodes using cathodoluminescence point spectra and hyperspectral imaging. The researchers observed the spatial rearrangement of optically active defects under strong reverse bias. These findings demonstrate the potential impact of extreme electric fields on atomic rearrangement and local doping changes in beta-Ga2O3, highlighting the importance of nanoscale device geometry in other high-power semiconductor devices.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Seungjin Nam, Sang Jun Kim, Kook Noh Yoon, Moon J. Kim, Manuel Quevedo-Lopez, Jun Yeon Hwang, Eun Soo Park, Hyunjoo Choi
Summary: In this study, CoCrFeNi-based metastable complex-concentrated alloys were designed using composition-property contour maps, and the mechanical properties were optimized by adjusting the concentrations of Co and Ni. The results demonstrate that this approach is effective in designing complex-concentrated alloys with customized properties.
MATERIALS & DESIGN
(2022)
Article
Materials Science, Multidisciplinary
Luhua Wang, Jianwei Li, Liyin Gao, Xitao Wang, Ke Xu, Hailong Zhang, Jinguo Wang, Moon J. Kim
Summary: Interface design plays a critical role in enhancing the thermal properties of Cu/diamond composite materials. In this study, Cr alloying in Cu matrix and Ti coating on diamond particles were successfully utilized to construct a TiC/Cr3C2 gradient interface, leading to improved phonon transfer at the interface. The interfacial structure of the Cu-0.5 wt%Cr/diamond(Ti) composite was characterized, showcasing a diamond/graphite/TiC/Cr3C2/Cu configuration. The presence of a graphite layer and thick Cr3C2 layer in the Cu-Cr/diamond(Ti) composite resulted in a lower thermal conductivity compared to the Cu/diamond(Ti) composite.
Article
Chemistry, Multidisciplinary
Zachary D. Hood, Anil U. Mane, Aditya Sundar, Sanja Tepavcevic, Peter Zapol, Udochukwu D. Eze, Shiba P. Adhikari, Eungje Lee, George E. Sterbinsky, Jeffrey W. Elam, Justin G. Connell
Summary: Sulfide-based solid-state electrolytes (SSEs) have high ionic conductivity and favorable mechanical properties, making them promising for next-generation solid-state batteries. Thin Al2O3 coatings grown on Li6PS5Cl powders using atomic layer deposition simultaneously address the stability issues and improve cell performance. These coated powders exhibit higher ionic conductivities, lower electronic conductivities, and improved stability at the Li-SSE interface, leading to significantly improved battery cycle life.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Zexuan Zhang, Jashan Singhal, Shivali Agrawal, Eungkyun Kim, Vladimir Protasenko, Masato Toita, Huili Grace Xing, Debdeep Jena
Summary: Polarization-induced carriers are important for achieving high electrical conductivity in ultrawide bandgap semiconductor AlGaN. However, studies on these carriers in N-polar AlGaN are rare. This study observes and characterizes polarization-induced two-dimensional electron gases (2DEGs) in N-polar AlGaN/AlN heterostructures with varying Al content. The results provide valuable insights for designing high electron mobility transistors and UV photonic devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Jashan Singhal, Eungkyun Kim, Austin Hickman, Reet Chaudhuri, Yongjin Cho, Huili Grace Xing, Debdeep Jena
Summary: We conducted a study on the compositional dependence of electrical characteristics in AlxGa1-xN quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs), with x values of 0.25, 0.44, and 0.58. The use of selectively regrown n-type GaN Ohmic contacts resulted in increased contact resistance with higher Al content in the channel. The DC HEMT device characteristics showed a progressive reduction in maximum drain current densities and a simultaneous decrease in threshold voltage with increasing x values.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Wenwen Zhao, Mohammad Javad Asadi, Lei Li, Reet Chaudhuri, Kazuki Nomoto, Huili Grace Xing, James C. M. Hwang, Debdeep Jena
Summary: This study demonstrates epitaxial AlN thin-film bulk acoustic resonators (FBARs) on SiC substrates with first-order thickness extensional modes of 15-17 GHz. The achieved quality factor Q(max) of approximately 443, electromechanical coupling coefficient k(eff)(2) of approximately 2.3%, and f center dot Q of approximately 6.65 THz figure of merit are among the highest in the Ku-band (12-18 GHz). The clean primary mode with a high quality factor allows these epitaxial AlN FBARs to be used in Ku-band acoustic filters with clean bands and steep rejection. Additionally, their compatibility with AlN/GaN/AlN quantum well high-electron-mobility transistors (QW HEMTs) allows for monolithic integration with HEMT low noise amplifiers (LNAs) and power amplifiers (PAs).
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Biochemistry & Molecular Biology
Ju-Chen Chia, Jiapei Yan, Maryam Rahmati Ishka, Marta Marie Faulkner, Eli Simons, Rong Huang, Louisa Smieska, Arthur Woll, Ryan Tappero, Andrew Kiss, Chen Jiao, Zhangjun Fei, Leon Kochian, Elsbeth Walker, Miguel Pineros, Olena K. Vatamaniuk
Summary: Arabidopsis OPT3 transports Cu and Fe into phloem companion cells and plays a role in systemic signaling of Cu and Fe deficiencies.
Article
Chemistry, Multidisciplinary
Xinglu Wang, Yaoqiao Hu, Seong Yeoul Kim, Rafik Addou, Kyeongjae Cho, Robert M. Wallace
Summary: This study investigates the origins of Fermi level (E-F) pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. The origins of E-F pinning at a covalent contact metal/W-TMD interface are defects, impurities, and interface reaction products, while for a van der Waals contact metal/TMD system, the primary factor responsible for E-F pinning is the electronic modification of the TMDs resulting from defects and impurities.
Article
Materials Science, Multidisciplinary
Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena, Zhiting Tian
Summary: Aluminum scandium nitride (AlScN) is gaining attention for its larger piezoelectric response compared to AlN, but alloying Sc with AlN reduces thermal conductivity. Self-heating limits power handling in AlScN devices, and we compared thermal conductivity of AlScN grown on different substrates.
MATERIALS RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Aditya Sundar, David Bugallo Ferron, Yong-Jie Hu, Liang Qi
Summary: This study proposes a hierarchical workflow for the initial screening of promising body-centered-cubic (BCC) refractory multicomponent alloys. The workflow utilizes physics-informed surrogate models and thermodynamic modeling to select representative candidates based on various criteria and verification methods.
MRS COMMUNICATIONS
(2022)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)