The role of charge trapping in MoS2/SiO2and MoS2/hBN field-effect transistors

标题
The role of charge trapping in MoS2/SiO2and MoS2/hBN field-effect transistors
作者
关键词
-
出版物
2D Materials
Volume 3, Issue 3, Pages 035004
出版商
IOP Publishing
发表日期
2016-07-11
DOI
10.1088/2053-1583/3/3/035004

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