High-performance multilayer WSe2 field-effect transistors with carrier type control

MoS2–Titanium Contact Interface Reactions

(2016) Stephen McDonnell et al.   ACS Applied Materials & Interfaces

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

(2016) Pushpa Raj Pudasaini et al.   ADVANCED FUNCTIONAL MATERIALS

Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

(2016) Changjian Zhou et al.   ADVANCED FUNCTIONAL MATERIALS

Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

(2016) Christopher M. Smyth et al.   Journal of Physical Chemistry C

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

(2016) Mahito Yamamoto et al.   NANO LETTERS

Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors

(2016) Shunfeng Wang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

(2016) Xiaoxiang Xi et al.   PHYSICAL REVIEW LETTERS

Control of Radiative Exciton Recombination by Charge Transfer Induced Surface Dipoles in MoS2 and WS2 Monolayers

(2016) Peng Hu et al.   Scientific Reports

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions

(2016) Michael G. Stanford et al.   Scientific Reports

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Physical and chemical tuning of two-dimensional transition metal dichalcogenides

(2015) Haotian Wang et al.   CHEMICAL SOCIETY REVIEWS

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

(2015) Hennrik Schmidt et al.   CHEMICAL SOCIETY REVIEWS

Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating

(2015) Jaewoo Jeong et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

Charge-transfer-based Gas Sensing Using Atomic-layer MoS2

(2015) Byungjin Cho et al.   Scientific Reports

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

(2015) Ah-Jin Cho et al.   Nanoscale Research Letters

Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

(2015) Wu Shi et al.   Scientific Reports

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

(2014) Stephen McDonnell et al.   ACS Nano

High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Monolayer MoS2 Transistors

(2014) Bilu Liu et al.   ACS Nano

Air Stable p-Doping of WSe2 by Covalent Functionalization

(2014) Peida Zhao et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

(2014) Joonki Suh et al.   NANO LETTERS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Carrier Control of MoS2 Nanoflakes by Functional Self-Assembled Monolayers

(2013) Yang Li et al.   ACS Nano

Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

(2013) Mikai Chen et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Possible doping strategies for MoS2monolayers: Anab initiostudy

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B