Annealing behavior of ferroelectric Si-doped HfO2 thin films

标题

作者

关键词

HfO2, Ferroelectrics, RTA, Breakdown behavior

出版物

Volume 615, Issue -, Pages 139-144

出版商

Elsevier BV

发表日期

2016-07-08

DOI

10.1016/j.tsf.2016.07.009

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