Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 35, Issue 12, Pages 1233-1235

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-10-25

DOI

10.1109/led.2014.2363491

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