Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 38, Issue 8, Pages 1019-1022

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-06-24

DOI

10.1109/led.2017.2719161

Explore over 38,000 international journals covering a vast array of academic fields.

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now