Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

(2013) Dai-Ying Lee et al.   APPLIED PHYSICS LETTERS

Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

(2013) Yue Bai et al.   APPLIED PHYSICS LETTERS

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

(2013) Takeki Ninomiya et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

(2013) Bing Chen et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

(2012) Jung-Kyu Lee et al.   APPLIED PHYSICS LETTERS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

(2011) Bin Gao et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

High-speed and localized resistive switching characteristics of double-layer SrZrO3memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

(2008) Chih-Yang Lin et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY