Improved performance of ITO/TiO 2 /HfO 2 /Pt random resistive accessory memory by nitrogen annealing treatment

标题
Improved performance of ITO/TiO 2 /HfO 2 /Pt random resistive accessory memory by nitrogen annealing treatment
作者
关键词
High k, Annealing treatment, Resistive switching, Conduction mechanism
出版物
MICROELECTRONICS RELIABILITY
Volume 57, Issue -, Pages 34-38
出版商
Elsevier BV
发表日期
2015-12-04
DOI
10.1016/j.microrel.2015.11.018

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