A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

标题
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 15, Pages 153505
出版商
AIP Publishing
发表日期
2016-04-13
DOI
10.1063/1.4946006

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