Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

出版年份 2015 全文链接

标题

作者

关键词

Resistive switching, Al-doping, Ceria film, ReRAM devices, Schottky conduction

出版物

Volume 646, Issue -, Pages 662-668

出版商

Elsevier BV

发表日期

2015-06-20

DOI

10.1016/j.jallcom.2015.06.146

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