标题
Bipolar resistive switching characteristics in CuO/ZnO bilayer structure
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 13, Pages 134502
出版商
AIP Publishing
发表日期
2013-10-03
DOI
10.1063/1.4821237
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential
- (2013) A. A. Ogwu et al. JOURNAL OF APPLIED PHYSICS
- Effects of oxygen percentage on the growth of copper oxide thin films by reactive radio frequency sputtering
- (2013) P.K. Ooi et al. MATERIALS CHEMISTRY AND PHYSICS
- Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
- (2012) C. Chen et al. JOURNAL OF APPLIED PHYSICS
- High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device
- (2012) Wen-Yuan Chang et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate
- (2011) Ming Hua Tang et al. MICROELECTRONIC ENGINEERING
- TiO2—a prototypical memristive material
- (2011) K Szot et al. NANOTECHNOLOGY
- Bipolar resistance switching driven by tunnel barrier modulation in TiOx/AlOx bilayered structure
- (2010) Seung Jae Baik et al. APPLIED PHYSICS LETTERS
- Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
- (2010) Joonmyoung Lee et al. APPLIED PHYSICS LETTERS
- Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure
- (2010) Deepak Varandani et al. JOURNAL OF APPLIED PHYSICS
- Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions
- (2009) H. J. Zhang et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
- (2008) Nuo Xu et al. APPLIED PHYSICS LETTERS
- Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
- (2008) Kohei Fujiwara et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
- (2008) G. I. Meijer SCIENCE
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