Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

(2010) G. Dingemans et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Passivation of a (100) Silicon Surface by Silicon Dioxide Grown in Nitric Acid

(2009) N.E. Grant et al.   IEEE ELECTRON DEVICE LETTERS

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Recent developments in rear-surface passivation at Fraunhofer ISE

(2009) Marc Hofmann et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells

(2008) Valentin D. Mihailetchi et al.   APPLIED PHYSICS LETTERS

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

(2008) Jan Benick et al.   APPLIED PHYSICS LETTERS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology

(2008) Oliver Schultz et al.   PROGRESS IN PHOTOVOLTAICS