Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry

(2009) J. Price et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Point defects in Al2O3 and their impact on gate stacks

(2009) J.R. Weber et al.   MICROELECTRONIC ENGINEERING

Hybrid functionals applied to extended systems

(2008) M Marsman et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY