Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition

(2015) Yu-Seon Kang et al.   Journal of Physical Chemistry C

Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory

(2014) C. Guedj et al.   APPLIED PHYSICS LETTERS

The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation

(2014) Ebrahim Nadimi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-k-rare-earth-oxide Eu2O3films for transparent resistive random access memory (RRAM) devices

(2014) Ting Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

In situ TEM Observation of Resistance Switching in Titanate Based Device

(2014) Yang Yang et al.   Scientific Reports

Charge Transport and Degradation in HfO2 and HfOx Dielectrics

(2013) Andrea Padovani et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

(2013) R. K. Pandey et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of oxygen vacancies in hafnium oxide

(2013) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

(2012) S. K. Sahoo et al.   APPLIED PHYSICS LETTERS

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stress-induced leakage current and trap generation in HfO2 thin films

(2012) C. Mannequin et al.   JOURNAL OF APPLIED PHYSICS

Interaction and electronic structures of oxygen divacancy in HfO2

(2012) Wei Zhang et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

(2011) Jae Hyuck Jang et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2

(2011) J.L. Lyons et al.   MICROELECTRONIC ENGINEERING

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

(2009) Eun-Ae Choi et al.   APPLIED PHYSICS LETTERS

Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

(2009) Shimeng Yu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

(2008) Hokyung Park et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Determination of complex dielectric functions at HfO2/Si interface by using STEM-VEELS

(2008) Jucheol Park et al.   MICRON

First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric

(2007) L. F. Mao et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE