Stress-induced leakage current and trap generation in HfO2 thin films

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

(2012) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

TiNx/HfO2 interface dipole induced by oxygen scavenging

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

(2011) C. Mannequin et al.   JOURNAL OF APPLIED PHYSICS

Field dependent electrical conduction in HfO2/SiO2 gate stack for before and after constant voltage stressing

(2011) S. K. Sahoo et al.   JOURNAL OF APPLIED PHYSICS

A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

(2011) Santi Tous et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

HfO2, Sr-Ta-O and Ti-Ta-O High-k Dielectrics for Metal-Insulator-Metal Applications

(2011) M. Lukosius et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

(2010) C. Vallée et al.   APPLIED PHYSICS LETTERS

Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

(2010) X. Li et al.   APPLIED PHYSICS LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

(2009) C. Jorel et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks

(2008) Andreas Kerber et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES