The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

标题
The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 1, Pages 54-56
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2008-01-09
DOI
10.1109/led.2007.911992

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