Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

标题
Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 23, Pages 232903
出版商
AIP Publishing
发表日期
2012-06-08
DOI
10.1063/1.4726186

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