The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation

标题
The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 5, Pages 1278-1283
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-04-03
DOI
10.1109/ted.2014.2313229

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