Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)–Poly(Styrenesulfonate) Stacking Bilayer

Published 2011 View Full Article

Authors

Keywords

Journal

IEEE ELECTRON DEVICE LETTERS

Volume 32, Issue 3, Pages 387-389

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2011-02-01

DOI

10.1109/led.2010.2099102

References

View 5 related references

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

IEEE ELECTRON DEVICE LETTERS

Ask authors/readers for more resources

Protocol

Reagent

Reprint

Discover Peeref hubs

Create your own webinar