Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation
Authors
Keywords
-
Journal
Physica Status Solidi-Rapid Research Letters
Volume 7, Issue 4, Pages 282-284
Publisher
Wiley
Online
2013-02-11
DOI
10.1002/pssr.201206534
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
- (2012) Feng Miao et al. ACS Nano
- Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
- (2012) Guang Chen et al. ADVANCED MATERIALS
- Ultra-thin titanium oxide
- (2012) M. Bareiß et al. APPLIED PHYSICS LETTERS
- Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure
- (2012) C. Chen et al. APPLIED PHYSICS LETTERS
- Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
- (2012) Guangsheng Tang et al. Nanoscale
- Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
- (2012) Feng PAN et al. Progress in Natural Science-Materials International
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices
- (2010) Sun Young Choi et al. Physica Status Solidi-Rapid Research Letters
- Bipolar resistive switching in amorphous titanium oxide thin film
- (2010) Hu Young Jeong et al. Physica Status Solidi-Rapid Research Letters
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- High room-temperature photoluminescence of one-dimensional Ta2O5nanorod arrays
- (2009) Rupesh S Devan et al. NANOTECHNOLOGY
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now