The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

Title
The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 9, Pages 092103
Publisher
AIP Publishing
Online
2014-09-05
DOI
10.1063/1.4895102

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search