The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages 063508
Publisher
AIP Publishing
Online
2014-02-14
DOI
10.1063/1.4864617
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm
- (2013) Christoph Zysset et al. IEEE ELECTRON DEVICE LETTERS
- Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere
- (2012) Hyun-woo Park et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates
- (2012) Chang-Yu Lin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thin-film transistor behaviour and the associated physical origin of water-annealed In–Ga–Zn oxide semiconductor
- (2012) Byung Du Ahn et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
- (2010) Joon Seok Park et al. APPLIED PHYSICS LETTERS
- The Effect of Passivation Layers on the Negative Bias Instability of Ga–In–Zn–O Thin Film Transistors under Illumination
- (2010) Ji Sim Jung et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Woven Thin-Film Metal Interconnects
- (2010) Kunigunde H Cherenack et al. IEEE ELECTRON DEVICE LETTERS
- The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors
- (2010) Kwang Hwan Ji et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- The Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFT
- (2010) Sun-Il Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
- (2009) Jaeseob Lee et al. APPLIED PHYSICS LETTERS
- Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
- (2009) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
- Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
- (2009) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
- (2009) Charlene Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape
- (2008) Wantae Lim et al. APPLIED PHYSICS LETTERS
- High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
- (2008) Wantae Lim et al. APPLIED PHYSICS LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search