The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors

Published 2013 View Full Article

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Title
The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors
Authors
Keywords
-
Journal
CERAMICS INTERNATIONAL
Volume 40, Issue 2, Pages 3215-3220
Publisher
Elsevier BV
Online
2013-10-05
DOI
10.1016/j.ceramint.2013.09.118

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