Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
Published 2013 View Full Article
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Title
Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 10, Pages 102102
Publisher
AIP Publishing
Online
2013-03-12
DOI
10.1063/1.4794941
References
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