The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
出版年份 2014 全文链接
标题
The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 105, Issue 9, Pages 092103
出版商
AIP Publishing
发表日期
2014-09-05
DOI
10.1063/1.4895102
参考文献
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