Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
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Title
Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages 061606
Publisher
AIP Publishing
Online
2014-02-16
DOI
10.1063/1.4865901
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Related references
Note: Only part of the references are listed.- Activation of Al2O3 passivation layers on silicon by microwave annealing
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- Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
- (2012) G. Dingemans et al. JOURNAL OF APPLIED PHYSICS
- Improved quantitative description of Auger recombination in crystalline silicon
- (2012) Armin Richter et al. PHYSICAL REVIEW B
- Boron Emitter Passivation With Al$_{\bf 2}$O $_{\bf 3}$ and Al$_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks Using ALD Al$_{\bf 2}$O $_{\bf 3}$
- (2012) Armin Richter et al. IEEE Journal of Photovoltaics
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- (2011) Armin Richter et al. Physica Status Solidi-Rapid Research Letters
- Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
- (2010) G. Dingemans et al. APPLIED PHYSICS LETTERS
- Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD
- (2010) G. Dingemans et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]
- (2010) G. Dingemans et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
- (2009) Jonathon Mitchell et al. APPLIED PHYSICS LETTERS
- Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
- (2009) Pierre Saint-Cast et al. APPLIED PHYSICS LETTERS
- Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon
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- Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
- (2009) Tsu-Tsung Li et al. Physica Status Solidi-Rapid Research Letters
- Thermal stability of the Al2O3passivation on p-type silicon surfaces for solar cell applications
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- (2009) Tommi O. Kääriäinen et al. Plasma Processes and Polymers
- Stretched-exponential a-Si:H∕c-Si interface recombination decay
- (2008) Stefaan De Wolf et al. APPLIED PHYSICS LETTERS
- Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
- (2008) E. Langereis et al. APPLIED PHYSICS LETTERS
- Silicon surface passivation by atomic layer deposited Al2O3
- (2008) B. Hoex et al. JOURNAL OF APPLIED PHYSICS
- On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
- (2008) B. Hoex et al. JOURNAL OF APPLIED PHYSICS
- Al2O3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry
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