Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
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Title
Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 10, Pages 102103
Publisher
AIP Publishing
Online
2014-03-13
DOI
10.1063/1.4868303
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