Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Published 2013 View Full Article

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Title
Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 5, Pages 635-637
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-03-14
DOI
10.1109/led.2013.2248115

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