Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

(2013) Shinya Aikawa et al.   APPLIED PHYSICS LETTERS

Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure

(2013) Hyun-Woo Park et al.   APPLIED PHYSICS LETTERS

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

(2012) Kazuaki Ebata et al.   Applied Physics Express

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

(2012) Se Yeob Park et al.   APPLIED PHYSICS LETTERS

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

(2012) Sungsik Lee et al.   APPLIED PHYSICS LETTERS

Role of Si as carrier suppressor in amorphous Zn–Sn–O

(2012) IlJoon Kang et al.   CURRENT APPLIED PHYSICS

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

(2011) Joon Seok Park et al.   THIN SOLID FILMS

Persistent photoconductivity in Hf–In–Zn–O thin film transistors

(2010) Khashayar Ghaffarzadeh et al.   APPLIED PHYSICS LETTERS

Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

(2010) Khashayar Ghaffarzadeh et al.   APPLIED PHYSICS LETTERS

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

(2010) Joo Hyon Noh et al.   IEEE ELECTRON DEVICE LETTERS

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Improvement of InGaZnO4Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

(2009) Mitsuru Nakata et al.   Applied Physics Express

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

(2009) Chang-Jung Kim et al.   APPLIED PHYSICS LETTERS

High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs

(2009) G. Gonçalves et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

X-ray absorption spectroscopy study of the local structures of crystalline Zn–In–Sn oxide thin films

(2009) D. E. Proffit et al.   JOURNAL OF APPLIED PHYSICS

Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

(2009) Toshio Kamiya et al.   Journal of Display Technology

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Amorphous oxide channel TFTs

(2007) Hideya Kumomi et al.   THIN SOLID FILMS

Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

(2007) Yasuhiro Shimura et al.   THIN SOLID FILMS