Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

Published 2009 View Full Article

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Title
Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 4, Pages 04C091
Publisher
Japan Society of Applied Physics
Online
2009-04-20
DOI
10.1143/jjap.48.04c091

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