The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

The plasmonic resonant absorption in GaN double-channel high electron mobility transistors

(2011) Lin Wang et al.   APPLIED PHYSICS LETTERS

Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs

(2011) Jonathan G. Felbinger et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

(2011) Masataka Higashiwaki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress

(2011) Tamara B. Fehlberg et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

(2011) Matteo Meneghini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

(2011) Rajkumar Santhakumar et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes

(2011) Xiaodong Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Reduced thermal resistance of the silicon-synthetic diamond composite substrates at elevated temperatures

(2010) V. Goyal et al.   APPLIED PHYSICS LETTERS

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

(2010) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

(2010) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

(2010) L. Wang et al.   JOURNAL OF APPLIED PHYSICS

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

(2009) Fabio Alessio Marino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(2009) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

(2008) A. M. Dabiran et al.   APPLIED PHYSICS LETTERS

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

(2007) S.K. Jha et al.   SOLID-STATE ELECTRONICS