Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 12, Pages 1690-1692Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2218272
Keywords
Back barrier; GaN; high electron mobility (HEMT); two-dimensional electron gas (2DEG)
Categories
Funding
- Indian Institute of Technology Department of Science and Technology [SR/S3/EECE/0060/2009, SR/S3/EECE/0092/2009]
- King Abdulaziz City for Science and Technology [8-NAN132-3]
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We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.
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