Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C
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Title
Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 23, Pages 233504
Publisher
AIP Publishing
Online
2014-12-11
DOI
10.1063/1.4903874
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