Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

(2012) Jae Gwang Um et al.   APPLIED PHYSICS LETTERS

Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

(2012) Mallory Mativenga et al.   SOLID STATE COMMUNICATIONS

Maximum applied voltage detector using amorphous In–Ga–Zn–O thin-film transistor exposed to ozone annealing

(2012) Mutsumi Kimura et al.   SOLID-STATE ELECTRONICS

WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

(2012) Tien-Yu Hsieh et al.   THIN SOLID FILMS

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

(2012) Mallory Mativenga et al.   AIP Advances

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

(2011) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

(2011) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

(2010) Mallory Mativenga et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Transparent, high mobility InGaZnO thin films deposited by PLD

(2007) Arun Suresh et al.   THIN SOLID FILMS