A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

Tunable work function of a WOx buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells

(2011) Liang Fang et al.   JOURNAL OF APPLIED PHYSICS

Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism

(2010) J. Meyer et al.   APPLIED PHYSICS LETTERS

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

(2009) R. Deng et al.   APPLIED PHYSICS LETTERS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

(2008) Yong Cheol Shin et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS