Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Published 2013 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 3R, Pages 031801
Publisher
IOP Publishing
Online
2013-02-20
DOI
10.7567/jjap.52.031801

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.