Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism

(2012) Ming-Chi Wu et al.   JOURNAL OF APPLIED PHYSICS

A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

(2011) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

(2011) Li He et al.   NANO LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

(2010) Wan Shen et al.   JOURNAL OF APPLIED PHYSICS

High-speed and localized resistive switching characteristics of double-layer SrZrO3memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO[sub 2] Thin Films

(2010) Dai-Ying Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

(2008) Yong Cheol Shin et al.   APPLIED PHYSICS LETTERS