High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Authors

Keywords

Journal

Volume 59, Issue 2, Pages 335-341

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2011-12-14

DOI

10.1109/ted.2011.2176495

References

View 4 related references

Explore over 38,000 international journals covering a vast array of academic fields.

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started