Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs

(2009) M. L. Huang et al.   APPLIED PHYSICS LETTERS

Surface passivation and implications on high mobility channel performance (Invited Paper)

(2009) C.L. Hinkle et al.   MICROELECTRONIC ENGINEERING

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

(2008) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

(2008) K. Y. Lee et al.   APPLIED PHYSICS LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

Beyond Silicon's Elemental Logic

(2008) Peide Ye   IEEE SPECTRUM