Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps

(2012) A. V. Shaposhnikov et al.   APPLIED PHYSICS LETTERS

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

(2012) Thomas Bertaud et al.   APPLIED PHYSICS LETTERS

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

(2012) M. Sowinska et al.   APPLIED PHYSICS LETTERS

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

(2011) C. H. Cheng et al.   APPLIED PHYSICS LETTERS

Long-Endurance Nanocrystal $\hbox{TiO}_{2}$ Resistive Memory Using a TaON Buffer Layer

(2011) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

(2009) Xiao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS