Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Optical properties and thermal stability of germanium oxide (GeO2) nanocrystals with α-quartz structure

(2010) C.V. Ramana et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

(2009) W. B. Chen et al.   APPLIED PHYSICS LETTERS

Band offsets at the Ge/GeO2 interface through hybrid density functionals

(2009) Peter Broqvist et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in amorphous alumina

(2009) Yu. N. Novikov et al.   APPLIED PHYSICS LETTERS

Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

(2009) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE