Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

(2009) W. B. Chen et al.   APPLIED PHYSICS LETTERS

Role of TaON interface for CuxO resistive switching memory based on a combined model

(2009)   APPLIED PHYSICS LETTERS

Time-dependent electroforming in NiO resistive switching devices

(2009) Gyoung-Ho Buh et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS