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Title
Memristive behavior of ZnO film with embedded Ti nano-layers
Authors
Keywords
Oxygen Vacancy, Resistive Switching, Conducting Filament, Highly Resistive State, Resistive Random Access Memory
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 116, Issue 1, Pages 1-7
Publisher
Springer Nature
Online
2014-05-09
DOI
10.1007/s00339-014-8450-z
References
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