Resistive switching characteristics of nickel silicide layer embedded HfO2 film

Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism

(2012) Ming-Chi Wu et al.   JOURNAL OF APPLIED PHYSICS

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

(2011) Debashis Panda et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

(2011) Dai-Ying Lee et al.   JOURNAL OF APPLIED PHYSICS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Correlating structural and resistive changes in Ti:NiO resistive memory elements

(2010) O. Heinonen et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films

(2010) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films

(2010) D. Panda et al.   JOURNAL OF APPLIED PHYSICS

Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires

(2010) Yung-Chen Lin et al.   NANO LETTERS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Schottky Barrier Characteristics of Cobalt–Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications

(2008) D. Panda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES