Effects of metal contacts and dopants on the performance of ZnO-based memristive devices
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effects of metal contacts and dopants on the performance of ZnO-based memristive devices
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 1, Pages 014513
Publisher
AIP Publishing
Online
2011-07-15
DOI
10.1063/1.3599952
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Highly stable resistive switching on monocrystalline ZnO
- (2010) Andy Shih et al. NANOTECHNOLOGY
- Switchable rectifier built with Pt/TiOx/Pt trilayer
- (2009) Hisashi Shima et al. APPLIED PHYSICS LETTERS
- Resistance switching at the Al/SrTiO3−xNy anode interface
- (2009) A. Shkabko et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
- (2009) Min Kyu Yang et al. APPLIED PHYSICS LETTERS
- Phase-transition driven memristive system
- (2009) T. Driscoll et al. APPLIED PHYSICS LETTERS
- Studies on nonvolatile resistance memory switching in ZnO thin films
- (2009) L. M. Kukreja et al. BULLETIN OF MATERIALS SCIENCE
- RESET Mechanism of TiOx Resistance-Change Memory Device
- (2009) Wei Wang et al. IEEE ELECTRON DEVICE LETTERS
- Interfacial defects in resistive switching devices probed by thermal analysis
- (2009) H. K. Lau et al. JOURNAL OF APPLIED PHYSICS
- Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
- (2009) T. Menke et al. JOURNAL OF APPLIED PHYSICS
- Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
- (2009) Keisuke Oka et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Bipolar resistance switching characteristics in a thin Ti–Ni–O compound film
- (2009) Joonhyuk Choi et al. NANOTECHNOLOGY
- Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells
- (2009) Doo Seok Jeong et al. NANOTECHNOLOGY
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell
- (2009) Doo Seok Jeong et al. PHYSICAL REVIEW B
- Putting Memory Into Circuit Elements: Memristors, Memcapacitors, and Meminductors [Point of View]
- (2009) M. Di Ventra et al. PROCEEDINGS OF THE IEEE
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices
- (2008) S. X. Wu et al. APPLIED PHYSICS LETTERS
- Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
- (2008) Jung Won Seo et al. APPLIED PHYSICS LETTERS
- Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
- (2008) Nuo Xu et al. APPLIED PHYSICS LETTERS
- The fourth element
- (2008) James M. Tour et al. NATURE
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Spin memristive systems: Spin memory effects in semiconductor spintronics
- (2008) Yu. V. Pershin et al. PHYSICAL REVIEW B
- Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
- (2008) N Xu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now